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AFT09S200W02Sr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 56 w rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 920 to 960 mhz. ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1400 ma, p out = 56 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 920 mhz 19.6 34.1 6.9 ?35.2 ?28 940 mhz 19.6 34.7 7.0 ?35.4 ?18 960 mhz 19.4 35.6 6.8 ?34.7 ?12 features ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? able to withstand extremely high output vswr and broadband operating conditions ? optimized for doherty applications document number: AFT09S200W02S rev. 0, 4/2015 freescale semiconductor technical data 920?960 mhz, 56 w avg., 28 v airfast rf power ldmos transistor AFT09S200W02Sr3 figure 1. pin connections ni--780s--2l (top view) rf in /v gs 21 rf out /v ds ? freescale semiconductor, inc., 2015. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT09S200W02Sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +70 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +125 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 226 1.1 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 81 ? c, 56 w cw, 28 vdc, i dq = 1400 ma, 940 mhz r ? jc 0.34 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 270 ? adc) v gs(th) 1.0 1.5 2.0 vdc gate quiescent voltage (v ds =28vdc,i d = 1400 madc) v gs(q) ? 2.15 ? vdc fixture gate quiescent voltage (4) (v dd =28vdc,i d = 1400 madc, measured in functional test) v gg(q) 3.2 4.3 5.2 vdc drain--source on--voltage (v gs =10vdc,i d =2.7adc) v ds(on) 0.1 0.26 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. v gg =2 ? v gs(q) . parameter measured on freescale text fixture, due to resist or divider network on the board. refer to test fixture layout. (continued)
AFT09S200W02Sr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 56 w avg., f = 960 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 18.5 19.4 21.5 db drain efficiency ? d 32.5 35.6 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.3 6.8 ? db adjacent channel power ratio acpr ? ?34.7 --33.0 dbc input return loss irl ? ?12 -- 9 db load mismatch (in freescale test fixture, 50 ohm system) i dq = 1400 ma, f = 940 mhz vswr 10:1 at 32 vdc, 148 w cw output power (0 db input overdrive from 148 w cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 920?960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 148 ? w am/pm (maximum value measured at the p3db compression point across the 920?960 mhz frequency range) ? ? -- 1 2 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 230 ? mhz gain flatness in 40 mhz bandwidth @ p out =56wavg. g f ? 0.3 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.018 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.004 ? db/ ? c table 5. ordering information device tape and reel information package AFT09S200W02Sr3 r3 suffix = 250 units, 56 mm tape width, 13--inch reel ni--780s--2l 1. part internally matched both on input and output.
4 rf device data freescale semiconductor, inc. AFT09S200W02Sr3 figure 2. AFT09S200W02Sr3 test circ uit component l ayout ? 920?960 mhz *c1, c6, c7, c18, c19 and c24 are mounted vertically. c1* c2 c3 r1 r2 r3 c6* c7* r4 c4 c5 c8 c9 c10 c11 c14 c25 c17 c16 c19* c18* c21 c20 c23 c22 c24* c15 c13 c12 AFT09S200W02S rev. 0 d60691 cut out area v gg v gg v dd v dd table 6. AFT09S200W02Sr3 test circuit com ponent designations an d values ? 920?960 mhz part description part number manufacturer c1, c3, c4, c14, c15, c24 47 pf chip capacitors atc100b470jt500xt atc c2, c5, c8, c9, c10, c11, c12, c13 10 ? f chip capacitors c5750x7s2a106m230kb tdk c6, c7 2.7 pf chip capacitors atc100b2r7bt500xt atc c16, c17 5.6 pf chip capacitors atc100b5r6ct500xt atc c18, c19 2.0 pf chip capacitors atc100b2r0bt500xt atc c20, c21 1.0 pf chip capacitors atc100b1r0bt500xt atc c22, c23 0.3 pf chip capacitors atc100b0r3bt500xt atc c25 220 ? f, 100 v electrolytic capacitor eev-fk2a221m panasonic-ecg r1, r2 1000 ? , 1/4 w chip resistors crcw12061k00fkea vishay r3, r4 10 ? , 1/8 w chip resistors rk73h2attd10r0f koa speer pcb rogers ro4350b, 0.020 ? , ? r =3.66 d60691 mtl
AFT09S200W02Sr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) -- 2 4 -- 0 -- 6 -- 1 2 -- 1 8 -- 3 0 parc (db) -- 4 . 5 -- 2 . 5 -- 3 -- 3 . 5 -- 4 -- 5 820 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 56 watts avg. 18.2 20.2 20 19.8 -- 3 8 38 37 36 35 -- 2 8 -- 3 0 -- 3 2 -- 3 4 ? d , drain efficiency (%) g ps , power gain (db) 19.6 19.4 19.2 19 18.8 18.6 18.4 840 860 880 900 920 940 960 980 34 -- 3 6 acpr (dbc) acpr ? d parc g ps irl v dd =28vdc,p out =56w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf figure 4. intermodulation distortion products versus two--tone spacing two?tone spacing (mhz) 10 ?75 0 ?15 ?30 1 300 imd, intermodulatio n distortion (dbc) ?45 v dd =28vdc,p out = 82 w (pep) i dq = 1400 ma, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz im5?u im7?l im3?l 100 ?60 im3?u im5?l im7?u figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 20 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 5 35 50 95 0 60 50 40 30 20 10 ? d ? drain efficiency (%) 65 acpr parc acpr (dbc) -- 5 5 -- 2 5 -- 3 0 -- 3 5 -- 4 5 -- 4 0 -- 5 0 20.5 g ps , power gain (db) 20 19.5 19 18.5 18 17.5 g ps -- 5 1 -- 2 d b = 4 0 w 80 -- 1 d b = 2 7 w -- 3 d b = 5 6 w ? d v dd =28vdc,i dq = 1400 ma, f = 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf
6 rf device data freescale semiconductor, inc. AFT09S200W02Sr3 typical characteristics 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 5 -- 2 5 15 21 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 20 19 10 100 200 10 -- 6 5 acpr (dbc) 18 17 16 -- 5 -- 3 5 -- 4 5 -- 5 5 acpr ? d 920 mhz 940 mhz 960 mhz g ps v dd =28vdc,i dq = 1400 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf 920 mhz 940 mhz 960 mhz 960 mhz 940 mhz 920 mhz figure 7. broadband frequency response 0 30 f, frequency (mhz) 20 15 10 gain (db) 25 5 550 700 850 1000 1150 1300 1450 gain v dd =28vdc p in =0dbm i dq = 1400 ma -- 5 0 10 0 -- 1 0 -- 2 0 -- 3 0 irl (db) -- 4 0 irl
AFT09S200W02Sr3 7 rf device data freescale semiconductor, inc. table 7. load pull performance ? maximum power tuning v dd =28vdc,i dq = 1389 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.13 ? j4.05 2.08 + j4.13 0.69 ? j1.56 18.5 54.2 266 52.4 ?6 940 2.50 ? j4.42 2.43 + j4.41 0.69 ? j1.61 18.2 54.2 266 52.4 ?6 960 2.80 ? j4.82 2.83 + j4.76 0.69 ? j1.67 18.0 54.1 259 51.9 ?6 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.13 ? j4.05 2.09 + j4.23 0.65 ? j1.63 16.2 55.5 351 56.4 ?9 940 2.50 ? j4.42 2.45 + j4.52 0.63 ? j1.67 15.8 55.5 353 56.1 ?9 960 2.80 ? j4.82 2.86 + j4.89 0.63 ? j1.68 15.6 55.4 348 56.1 ?9 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dq = 1389 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.13 ? j4.05 2.09 + j4.20 1.84 ? j0.62 22.1 51.6 143 66.4 ?13 940 2.50 ? j4.42 2.47 + j4.48 1.79 ? j0.56 21.9 51.4 137 66.8 ?14 960 2.80 ? j4.82 2.88 + j4.81 1.69 ? j0.72 21.5 51.5 142 65.7 ?13 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 2.13 ? j4.05 2.10 + j4.29 1.65 ? j0.75 19.8 52.9 196 70.5 ?18 940 2.50 ? j4.42 2.47 + j4.56 1.56 ? j0.87 19.4 53.1 203 70.4 ?18 960 2.80 ? j4.82 2.90 + j4.92 1.54 ? j0.90 19.1 53.0 197 69.2 ?17 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. AFT09S200W02Sr3 p1db -- typical load pull contours ? 940 mhz 1 0 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 -- 2 . 5 2.5 3 -- 0 . 5 1 0 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 -- 2 . 5 2.5 3 -- 0 . 5 1 0 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 -- 2 . 5 2.5 3 -- 0 . 5 imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) 1 0 imaginary ( ? ) 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) -- 2 . 5 2.5 3 -- 0 . 5 imaginary ( ? ) p e 50 50.5 51 51.5 52 52.5 53 53.5 54 64 62 60 58 56 54 52 50 p e 50 52 66 p e 23 21 20.5 20 19.5 19 22.5 22 21.5 -- 1 0 -- 1 6 -- 1 8 p e -- 4 -- 6 -- 8 -- 1 2 -- 1 4
AFT09S200W02Sr3 9 rf device data freescale semiconductor, inc. p3db -- typical load pull contours ? 940 mhz 1 0 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 -- 2 . 5 2.5 3 -- 0 . 5 1 0 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 -- 2 . 5 2.5 3 -- 0 . 5 imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) 1 0 imaginary ( ? ) 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) -- 2 . 5 2.5 3 -- 0 . 5 imaginary ( ? ) 1 0 0.5 11.5 3.5 0.5 -- 1 -- 1 . 5 2 -- 2 0 -- 2 . 5 2.5 3 -- 0 . 5 imaginary ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) p e 52 51.5 52.5 53 53.5 54 54.5 55 64 62 60 58 56 54 p e 54 66 68 70 p e 16.5 17 17.5 18 18.5 19 19.5 20 20.5 p e -- 1 0 -- 1 6 -- 1 8 -- 6 -- 8 -- 1 2 -- 1 4 -- 2 0 -- 2 2
10 rf device data freescale semiconductor, inc. AFT09S200W02Sr3 package dimensions
AFT09S200W02Sr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. AFT09S200W02Sr3 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 apr. 2015 ? initial release of data sheet
AFT09S200W02Sr3 13 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT09S200W02S rev. 0, 4/2015

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